| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of ashing during a semiconductor manufacturing process, without the need for using the low-pressure plasma method using a vacuum chamber, by which processing unevenness will not occur, even in a product having a complicated shape. SOLUTION: In this method of ashing during a semiconductor manufacturing process, discharge plasma treatment is performed. The surface of a product to be treated is irradiated with UV light. Then, at least one of opposed surfaces of a pair of opposed electrodes is covered with a solid dielectric, under pressure close to the atmospheric pressure. Glow discharge plasma, obtained by introducing a treatment gas between the pair of electrodes and applying an electric field, is brought into contact with the UV-irradiated product. COPYRIGHT: (C)2003,JPO
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