RUTHENIUM COMPOUND FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION METHOD, AND RUTHENIUM-CONTAINING THIN FILM OBTAINED FROM THE COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a ruthenium compound for an organometallic chemical vapor deposition method by which proper film deposition rate can be obtained by an organometallic chemical vapor deposition method using a solid sublimation process and also to provide a ruthenium-containing thin film having excellent step coverage characteristics and surface morphology and superior electrical properties. SOLUTION: In this ruthenium compound for an organometallic chemical vapor deposition method, 10 to 100 ppm rhenium is incorporated into a ruthenium compound composed of bis(cyclopentadienyl)ruthenium complex. COPYRIGHT: (C)2003,JPO