| 摘要 |
PROBLEM TO BE SOLVED: To form homogenous crystal film by controlling the distribution of composition in the vapor growth method of compound semiconductor, containing In and As and also at lest either of Ga or Al. SOLUTION: As In raw material, a trymethyl compound is used, as the Ga raw material and Al raw material, a tryethyl compound is used and as the As raw material, AsH<SB>3</SB>is used. When the temperature of a substrate 11 is within the temperature region (670°C or lower) in which the intermediate reaction of the In raw material and As raw material increases with the rise in the temperature of the substrate 11, a supply ratio of a group V raw material gas and a group III raw material gas is set to 50 or lower. When the temperature of substrate 11 is within the temperature region (670°C or larger), in which the intermediate reaction between Ga raw material or Al raw material and the As raw material increases with the rise in the temperature of the substrate 11, a supply ratio of the group V raw material gas and the group III raw material gas is set to 100 or larger, and preferably to 250 or larger. COPYRIGHT: (C)2003,JPO
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