发明名称 |
Semiconductor device having a contact window and fabrication method thereof |
摘要 |
Semiconductor devices having a contact window and fabrication methods thereof are provided. A lower dielectric layer, conductive patterns and an upper dielectric layer are formed sequentially on a semiconductor substrate. The lower dielectric layer has a higher isotropic etch rate than that of the upper dielectric layer. The upper dielectric layer and the lower dielectric layer are patterned by anisotropic etching to form a trench without exposing the semiconductor substrate. The resultant structure is subject to isotropic etching to expose the substrate and to form a contact window having a wider width in a lower region than in an upper region without damaging the semiconductor substrate.
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申请公布号 |
US2003132526(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20030341766 |
申请日期 |
2003.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JEON JEONG-SIC;KIM JAE-WOONG |
分类号 |
H01L21/28;H01L21/311;H01L21/461;H01L21/768;H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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