Semiconductor memory device e.g. dynamic RAM, has control circuit that selects the redundant memory line based on the initial comparison of the input address to a first primary stored address when operating in an primary mode

摘要

A control circuit (100) selects the redundant memory line based on the initial comparison of the input address to a first primary stored address in an primary mode. At an alternate mode, the circuit selects the redundant memory line based on the comparison of the input address to an alternate stored address. The alternate stored address can be stored after the memory device is packaged. Independent claims are also included for the following: (a) a method of repairing a semiconductor memory device; and (b) a post repair method for replacing defective lines with redundancy lines in a memory device