发明名称 Method of fabricating semiconductor device on semiconductor wafer
摘要 A method of fabricating a semiconductor device on a semiconductor wafer includes: adhering a carrier plate on an upper surface of the semiconductor wafer via a double-faced protective tape; and thereafter grinding an undersurface of the semiconductor wafer, which includes a circuit pattern formed on the upper surface, to reduce the thickness of the semiconductor wafer.
申请公布号 US2003134490(A1) 申请公布日期 2003.07.17
申请号 US20020263682 申请日期 2002.10.04
申请人 INUZUKA TADASHI 发明人 INUZUKA TADASHI
分类号 H01L21/683;H01L21/301;H01L21/304;H01L21/673;H01L21/677;H01L21/68;H01L21/78;(IPC1-7):H01L21/30;H01L21/46 主分类号 H01L21/683
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