| 摘要 |
<p>Quantum wells and associated barrier layers can be grown to include nitrogen (N), aluminum (AI), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the (1260) to (1650) nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well 11 comprised of InGaAsN; barrier layers (12) sandwiching said at least one quantum well 11; and confinement layers (13) sandwiching said barrier layers (12). Confinement (13) and barrier layers (12) can comprise AIGaAs, GaAsN. Barrier layers (12) can also comprise InGaAsN. Quantum wells 11 can also include Sb. Quantum wells (11) can be developed up to and including 50 Å in thickness. Quantum wells (11) can also be developed with a depth of at least 40 meV.</p> |
