| 摘要 |
A method and structure of ex-situ polymer stud grid array (ESWS-PSGA) contact formation on a semiconductor wafer (5) having individual integrated circuit (IC) device areas (10). A large area of a polymer stud grid array (PSGA) field, including a polymer film (36), is pre-fabricated and then interconnected with the semiconductor wafer (5), and the ESWS-PSGA is formed using methods including laser structuring, compression molding, photolithographic-plasma etching, photolithographic processing, or adding material to the surface of the polymer film (36). The ESWS-PSGA has the PSGA field extend across the entire active surface of the semiconductor wafer (5), with metallized PSGA input/output (I/O) studs (121) being disposed across the individual IC device areas (10). Alternatively, the ESWS-PSGA can be formed by spreading an extension of the polymer film (36) beyond the perimeter of the semiconductor wafer (5), with metallized PSGA input/output (I/O) studs (121) being disposed across the individual IC device areas (10). The extension provides temporary connection to an integrated circuit tester and/or an integrated circuit burn-in system, and may have studs for connecting to the tester. |
