发明名称 |
Magnetoresistive element, memory element using the magnetorestistive element, and recording/reproduction method for the memory element |
摘要 |
<p>A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed. <IMAGE> <IMAGE></p> |
申请公布号 |
EP1244117(A3) |
申请公布日期 |
2003.07.16 |
申请号 |
EP20020006094 |
申请日期 |
2002.03.18 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NISHIMURA, NAOKI;IKEDA, TAKASHI |
分类号 |
G11C11/15;H01F10/32;H01L21/8246;H01L27/22;(IPC1-7):H01F10/32;H01L43/08;G11C11/16 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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