发明名称 Memory cell for plateline sensing
摘要 Sensing of information from a memory cell via a plateline is disclosed. The memory cell comprises a bitline coupled to a junction of a cell transistor while the other junction is coupled to an electrode of the capacitor. The bitline is coupled to a constant voltage source. A plateline is coupled to the other capacitor electrode.
申请公布号 US6593613(B1) 申请公布日期 2003.07.15
申请号 US20000525093 申请日期 2000.03.14
申请人 INFINEON TECHNOLOGIES AG 发明人 ALSMEIER JOHANN;GRUENING ULRIKE;MUELLER GERHARD;PARK YOUNG-JIN
分类号 G11C11/404;G11C7/06;G11C11/401;G11C11/407;G11C11/4074;G11C11/409;(IPC1-7):H01L27/108 主分类号 G11C11/404
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