| 发明名称 |
Vapor-phase processing method and apparatus therefor |
| 摘要 |
A method in which etching or ashing is conducted by providing satisfactory kinetic energy of reaction seeds such as ions or radicals without damaging a substrate, and an apparatus used in this method are provided. A predetermined film of for example polycrystalline silicon on the substrate is etched in vapor phase using reaction seeds or precursors thereof generated by contacting a reaction gas such as CF4 with a heated catalyst of for example tungsten.
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| 申请公布号 |
US6592771(B1) |
申请公布日期 |
2003.07.15 |
| 申请号 |
US20000544803 |
申请日期 |
2000.04.07 |
| 申请人 |
SONY CORPORATION |
发明人 |
YAMANAKA HIDEO;KAISE KIKUO |
| 分类号 |
H01L21/00;H01L21/3065;H01L21/311;H01L21/3213;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/00 |
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