发明名称 |
Plasma treatment to enhance inorganic dielectric adhesion to copper |
摘要 |
The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.
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申请公布号 |
US6593660(B2) |
申请公布日期 |
2003.07.15 |
申请号 |
US20010866937 |
申请日期 |
2001.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BUCHWALTER LEENA P.;LUTHER BARBARA;AGNELLO PAUL D.;HUMMEL JOHN P.;KANE TERENCE LAWRENCE;MANGER DIRK KARL;MCLAUGHLIN PAUL STEPHEN;STAMPER ANTHONY KENDALL;WANG YUN YU |
分类号 |
H01L23/522;H01L21/04;H01L21/28;H01L21/318;H01L21/768;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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