| 摘要 |
PURPOSE: An electron-beam lithography mask is provided to effectively compensate a proximity effect by using an SCALPEL(Scattering Angular Limitation Projection Electron-beam Lithography). CONSTITUTION: The electron-beam lithography mask comprises the first mask(210) for patterning an incident electron-beam and the second mask(220) formed at lower part of the first mask so as to uniform the energy strength of the electron-beam. The first mask(210) further includes a membrane layer(210A) for transmitting the electron-beam and a plurality of scatter layers(210B) formed on the membrane layer(210A) for shielding the electron-beam. Also, the second mask(220) further includes a plurality of membrane layers(220A,220B,220C) on which sequentially stacked.
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