| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device in which a row block decoder is abolished and area on layout can be utilized effectively. <P>SOLUTION: The device is provided with a memory cell array 200 comprising a plurality of row blocks b0-bM, a row control section 100 outputting a row block enable-signal msb and a row block selecting signal xmat<SB>-</SB>yf based on a row address signal bax9B<SB>-</SB>b from a row address pre-decoder 500 and a row fuse 400 a row redundancy signal from a row fuse 400, a plurality of word lines 203 transmitting the row block enable-signal msb to a corresponding row block, a column fuse box array 600, and a memory cell array through wiring 700 arranged so as to transmit the row block selecting signal xmat<SB>-</SB>yf to the column fuse box array 600 through the memory cell array 200. <P>COPYRIGHT: (C)2003,JPO |
