发明名称 SWITCHING CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To ensure, when a switch circuit formed by connecting in a cascade an NPN bipolar transistor and a MOS-FET is turned off, that the bipolar transistor goes reliably into a reverse bias state. <P>SOLUTION: The switch circuit is formed by connecting in a cascade a switch element Q1, that is an NPN bipolar transistor with a MOS-FET switching element Q2. A potential setting circuit is provided that ensures reverse bias state for the switching element Q1, when the switch circuit is OFF. The potential setting circuit is provided with a diode Dbe inserted between the emitter and the base of the switch element Q1, and a voltage source Vee, which is connected via a resistance Re to the anode side of the diode Dbe and which applies a prescribed DC potential thereto. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003199328(A) 申请公布日期 2003.07.11
申请号 JP20010396535 申请日期 2001.12.27
申请人 SONY CORP 发明人 TAKAHAMA MASANOBU
分类号 H02M1/08;H03K17/04;H03K17/60 主分类号 H02M1/08
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