| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma enhanced CVD system that can significantly reduce the amount of fine particles entrapped in a film during the formation of the film. <P>SOLUTION: This plasma enhanced CVD system is provided with a reaction chamber; a supporting electrode which is arranged in the reaction chamber, contains a heating heater, supports an object to be treated, and set to a ground potential; and a ladder-type electrode which is arranged in parallel with the supporting electrode at a desired distance from the electrode in the reaction chamber, and constituted by combining hollow bars each having a plurality of gas blowing-out holes opened on the supporting electrode side with each other; a high-frequency power source which supplies high-frequency power to the ladder-type electrode, a gas supply means connected to the ladder-type electrode through an insulated tube; a gas sucking means which has a blind annular shape and arranged in the reaction chamber so that the blind annular opening of the member may be brought close to the ladder-type electrode on the side opposite to the supporting electrode; and an exhaust pipe one end of which is connected to the gas sucking member. <P>COPYRIGHT: (C)2003,JPO</p> |
