| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor element. SOLUTION: The method for forming the fine pattern of the semiconductor element comprises steps of sequentially forming a first insulating film and a second insulating film, forming a photosensitive film having a pitch size of 2×(α+β), dry etching a second insulating film using the photosensitive film as a mask, removing the photosensitive film, forming a third insulating film on the overall surface of a semiconductor substrate containing the retained second insulating film, forming a fourth insulating film on a site between the retained second insulating films in a resultant structure, performing a first flattening step by a method having a selecting ratio of dry etching for the third film and the fourth film being 1:1, etching the third insulating film using the retained fourth and second films as masks to form a third insulating film pattern, charging a conductive film in a space between the second film and the third film, and then performing a second flattening step at the conductive film, to form conductive film wiring 6 having a pitch size of (α+β). COPYRIGHT: (C)2003,JPO |
