| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a field effect transistor and a field effect transistor using the wafer where a low-temperature sedimental layer formed on a sapphire substrate is made to carry high resistance. SOLUTION: The epitaxial wafer for a field effect transistor uses a gallium nitride semiconductor whose channel layer is made of a nitride mix crystal containing GaN. When the field effect transistor structure is grown on the sapphire substrate 1 through the low-temperature sedimental layer 21 or 22 containing GaN or InGaN, respectively, deposited, the deposition layer 21 or 22 is doped with Zn. COPYRIGHT: (C)2003,JPO
|
