| 摘要 |
PROBLEM TO BE SOLVED: To improve frequency characteristics in a lateral PNP transistor. SOLUTION: A method for manufacturing a semiconductor device comprises steps of ion-implanting an impurity in a boundary of an emitter layer 14, then heat-treating to diffuse the impurity to form an ion implanted layer 20 in the case of forming the lateral PNP transistor having an emitter layer 14 having a P-type impurity, a base layer 15 having an N-type impurity and a collector layer 13 having a P-type impurity disposed on a surface of a semiconductor substrate (P-type substrate 10) along an in-plane direction. The method further comprises a step of forming a concentration gradient of the impurity by the layer 20 along the in-plane direction as the substrate between the collector layer 13 and the emitter layer 14. COPYRIGHT: (C)2003,JPO
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