| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a wafer, which solves problems that arise in manufacturing a semiconductor element, by reducing the lifting of a predetermined film or reducing the variation of an etching rate that depends on a region, in a process of etching the semiconductor element. SOLUTION: The method comprises; a step for etching the surface of a wafer which has been processed through ingotting, slicing, edge grinding and lapping, with an etching agent which has been obtained by diluting an undiluted solvent KOH with H<SB>2</SB>O; a step for polishing the back side of the wafer; and a step for conducting pre-annealing and cleaning, edge polishing, and front surface polishing. COPYRIGHT: (C)2003,JPO
|
