| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a thin film transistor with a structure having an LDD region adjacent to source/drain regions for electric field relaxation in order to improve the reliability of the thin film transistor without complicating manufacturing processes. SOLUTION: A thin film transistor is provided with a semiconductor layer, a gate insulator film and a gate electrode in this order, and the semiconductor layer on both sides of the gate electrode along the lengthwise direction of a channel is provided with a source region and a drain region through an LDD region from the gate electrode side. Interlayer insulation films covering the gate electrode, the LDD region, the source region and the drain region are provided, and the gate insulator film is located only under the gate electrode. The interlayer insulation films contacting the gate electrode, the LDD region, the source region and the drain region are the insulation films that are formed by the same process. By such thin film transistor, the above-mentioned purpose is achieved. COPYRIGHT: (C)2003,JPO
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