| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for preventing oxidation (surface burning) of a wafer surface due to mechanical grinding without lowering deflective strength of an IC. SOLUTION: (1) In the method of manufacturing semiconductor device, material, in which grain size of whetstone used for the grinding is small (#4,000) and the bond which supports the abrasive is hard (about two times the bond of the conventional one), is used in the double-axis process for grinding a semiconductor wafer. (2) In this double-axis process for grinding the semiconductor wafer, the number of revolutions of the whetstone used for the grinding process is set to 6,000 r.p.m. (3) Moreover, the grinding step is divided into three steps in the double-axis process for grinding the semiconductor wafer. (4) In addition, an amount of water injected to the semiconductor wafer during the grinding process is increased (4.7 L/Min.) more than the normal amount in the double-axis process for grinding the semiconductor wafer. COPYRIGHT: (C)2003,JPO
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