SEMICONDUCTOR DEVICE AND METHOD FOR INSPECTING SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device having a circuit for CBCM whose capacity can be accurately measured.

SOLUTION: A MOS transistor constituting the circuit for CBCM has the following structure. Source/drain regions 4 and 4' are selectively formed in the surface of a body region 16 and extension regions 5 and 5' extending from the extremity of the source/drain regions 4 and 4' which are opposed to each other are respectively formed. A gate insulating film 7 is formed between the source/drain regions 4 and 4' including the extension regions 5 and 5' and a gate electrode 8 is formed on the gate insulating film 7. However, the region corresponding to pocket regions 6 (6') in a conventional structure more heavily doped than a channel region is not formed at the end of the extension regions 5 (5') and on the periphery of the extension region 5.

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