MAGNETORESISTIVE EFFECT DEVICE, ITS MANUFACTURING METHOD, AND MAGNETIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect device which is equipped with a free layer that can be restrained from increasing in a coercive force without accompanying hindrance caused by a reduction of a film in thickness and reduced in power consumption when information is written. SOLUTION: A magnetoresistive effect device is equipped with a free layer 16 in which the direction of magnetization can be freely reversed, and the magnetoresistive effect device records information by the use of a change of the direction of magnetization in the free layer 16. The free layer 16 is a laminated structure composed of, at least, two layers. The laminated structure is composed of two layers, one is a ferromagnetic layer 16a and the other is a low saturation magnetization ferromagnetic layer 16b having a lower saturation magnetization than the ferromagnetic layer 16a. COPYRIGHT: (C)2003,JPO