| 摘要 |
PROBLEM TO BE SOLVED: To prevent an internal loss caused by absorption between valence bands and decrease of carrier mobility in an active area caused by a laser and an impurity diffusion in an amplifier concerning the pollution in an active area although a photoelectron semiconductor device using a p-i-n double hetero structure, as its default, diffuses a p type impurity for a second clad layer in an active layer and a distinction which obviously demarcated between a doped process clad layer and the active area intending an undoped process is tend not to exist. SOLUTION: A semiconductor structure includes a p-i-n double hetero structure, and a high dissoluble layer is provided in the p-i-n double hetero structure to decrease diffusion of the p type impurity from the clad layer to the active layer. The high dissoluble layer is preferable to be formed between the p type doped clad layer and the active layer. COPYRIGHT: (C)2003,JPO
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