发明名称 |
WAFER AND METHOD OF MANUFACTURING WAFER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing wafer in which the number of defects is significantly reduced. <P>SOLUTION: The method of manufacturing wafer comprises a step of preparing a substrate 102, forming a plurality of semiconductor devices 104 and contact pads 110 thereon, and covering these elements with a passivated layer 112; a step of exposing many contact pads 110 connected to the semiconductor devices 104 by etching each part of the passivated layer 112 corresponding to the contact pads 110; and a step of cleaning and rinsing the contact pads 110 by soaking the substrate 102 into the solution of nitric acid. The concentration of nitric acid solution is ranged to 30 vol.% from 0.01 vol.% and more preferably to 10 vol.% from 1 vol.%. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003197594(A) |
申请公布日期 |
2003.07.11 |
申请号 |
JP20020232026 |
申请日期 |
2002.08.08 |
申请人 |
MICRONICS INTERNATL CO LTD |
发明人 |
CHANG FANG-CHU;YU WEN-BIN;WANG HSIN-CHIN |
分类号 |
H01L21/304;H01L21/306;H01L21/311;H01L21/60;H01L23/31 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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