发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY |
摘要 |
<P>PROBLEM TO BE SOLVED: To narrow distribution width of a threshold value after write while suppressing increment of a write time. <P>SOLUTION: A nonvolatile semiconductor memory is provided with a nonvolatile semiconductor memory cell in which data can be rewritten electrically, and a write circuit being a write circuit writing data in a memory cell performing write for the memory cell by supplying write voltage Vpgm and write control voltage VBL to the memory cell and varying a value of the write control voltage VBL when the memory cell reaches a first write state and performing write for the memory cell, varying a value of the write control voltage VBL to Vdd when the memory cell reaches a second write state and prohibiting write of the memory cell M. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003196988(A) |
申请公布日期 |
2003.07.11 |
申请号 |
JP20010397446 |
申请日期 |
2001.12.27 |
申请人 |
TOSHIBA CORP;SANDISK CORP |
发明人 |
TANAKA TOMOHARU;CHEN JIAN |
分类号 |
G11C16/02;G11C11/56;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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