发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To narrow distribution width of a threshold value after write while suppressing increment of a write time. <P>SOLUTION: A nonvolatile semiconductor memory is provided with a nonvolatile semiconductor memory cell in which data can be rewritten electrically, and a write circuit being a write circuit writing data in a memory cell performing write for the memory cell by supplying write voltage Vpgm and write control voltage VBL to the memory cell and varying a value of the write control voltage VBL when the memory cell reaches a first write state and performing write for the memory cell, varying a value of the write control voltage VBL to Vdd when the memory cell reaches a second write state and prohibiting write of the memory cell M. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003196988(A) 申请公布日期 2003.07.11
申请号 JP20010397446 申请日期 2001.12.27
申请人 TOSHIBA CORP;SANDISK CORP 发明人 TANAKA TOMOHARU;CHEN JIAN
分类号 G11C16/02;G11C11/56;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
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