| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily, precisely, and non-destructively evaluating the quality of an SOI wafer, and a method for manufacturing a device wherein the yield and the long term reliability of the device are improved. SOLUTION: In the method for evaluating the SOI wafer, wherein a semiconductor layer, an insulating layer, and a supporting substrate are sequentially formed, the evaluation is carried out by a confocal laser microscope. Further, the SOI wafer is selected according to this evaluation method to manufacture the device. COPYRIGHT: (C)2003,JPO
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