| 摘要 |
PROBLEM TO BE SOLVED: To enable a photodetector to be improved both in operation speed and sensitivity. SOLUTION: A photodetector is equipped with a p-type diffusion layer 101, a p-type semiconductor layer 102, an n-type diffusion layer 103 serving as a photodetection layer, and a light transmission film 104 laminated on a p-type silicon substrate 100. The n-type diffusion layer 103 is larger in thickness than the absorption length of incident light having a wavelength of 400 nm, 0.8 to 1.0μm in thickness, and has an impurity concentration of 1E19 cm<SP>-3</SP>or below at its surface. The layer 103 has a concentration profile which indicates that impurities are maximum near the surface. Carriers which are generated by incident light are prevented from being recombined near the surface of the n-type diffusion layer 103, so that the photodetector can be improved in sensitivity and also in response speed by the n-type diffusion layer 103 that has a deep junction and a low resistance. COPYRIGHT: (C)2003,JPO
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