FLASH MEMORY CELL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A flash memory cell structure and a method for manufacturing the same are provided to be capable of reducing cell size without the deterioration of erase characteristic and improving the degree of integration of a total memory region. CONSTITUTION: A flash memory cell structure includes a selective transistor and a sensing transistor. A cell trench(32) and a tunnel oxide layer used as a tunneling region are formed in a semiconductor substrate(30) at the sensing transistor region. A buried doping region(34) operated as a control gate, is formed in the semiconductor substrate for being overlaid with a floating gate of the sensing transistor, the cell trench, and the tunneling region. Preferably, the floating gate and the buried doping region are overlaid with each other through five surfaces at the cell trench formed region.