发明名称 |
Method for fabricating a semiconductor memory device |
摘要 |
Capacitor devices are formed in an essentially vertically extending fashion in order to achieve an essentially three-dimensional configuration or a configuration extending into the third dimension. A contacting of plug regions is performed after producing the capacitor devices. Such capacitor devices provide an increased integration density in a semiconductor memory device.
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申请公布号 |
US2003129796(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020186597 |
申请日期 |
2002.07.01 |
申请人 |
BRUCHHAUS RAINER;ENDERS GERHARD;HARTNER WALTER;KRONKE MATTHIAS;MIKOLAJICK THOMAS;NAGEL NICOLAS;ROHNER MICHAEL |
发明人 |
BRUCHHAUS RAINER;ENDERS GERHARD;HARTNER WALTER;KRONKE MATTHIAS;MIKOLAJICK THOMAS;NAGEL NICOLAS;ROHNER MICHAEL |
分类号 |
H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L21/824;H01L21/823 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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