发明名称 |
Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization |
摘要 |
A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.
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申请公布号 |
US2003129774(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020044641 |
申请日期 |
2002.01.10 |
申请人 |
CHRISTIAN CRAIG WILLIAM;STICE JAMES CLAYTON |
发明人 |
CHRISTIAN CRAIG WILLIAM;STICE JAMES CLAYTON |
分类号 |
H01L21/66;H01L21/768;H01L23/532;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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