发明名称 Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization
摘要 A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.
申请公布号 US2003129774(A1) 申请公布日期 2003.07.10
申请号 US20020044641 申请日期 2002.01.10
申请人 CHRISTIAN CRAIG WILLIAM;STICE JAMES CLAYTON 发明人 CHRISTIAN CRAIG WILLIAM;STICE JAMES CLAYTON
分类号 H01L21/66;H01L21/768;H01L23/532;(IPC1-7):H01L21/00 主分类号 H01L21/66
代理机构 代理人
主权项
地址