| 发明名称 |
Anneal sequence for high-k film property optimization |
| 摘要 |
A method for improving high-kappa gate dielectric film (104) properties. The high-kappa film (104) is subjected to a two step anneal sequence. The first anneal is a high temperature anneal in a non-oxidizing ambient (106) such as N2 to densify the high-kappa film (104). The second anneal is a lower temperature anneal in an oxidizing ambient (108) to perform a mild oxidation that heals the high-kappa film and reduces interface defects.
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| 申请公布号 |
US2003129817(A1) |
申请公布日期 |
2003.07.10 |
| 申请号 |
US20020185326 |
申请日期 |
2002.06.28 |
| 申请人 |
VISOKAY MARK R.;COLOMBO LUIGI;ROTONDARO ANTONIO L. P. |
发明人 |
VISOKAY MARK R.;COLOMBO LUIGI;ROTONDARO ANTONIO L. P. |
| 分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/324;H01L29/51;(IPC1-7):H01L21/336;H01L21/31 |
主分类号 |
H01L21/28 |
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