Image sensor array with reduced pixel crosstalk

摘要

Improved pixel circuits are disclosed for high fill-factor large area imager systems using continuous (e.g., amorphous silicon) sensor layers. A first approach prevents crosstalk by ensuring that each pixel is not able to go into saturation. A second approach employs a cascode transistor to maintain the bias of the sensor contact at a constant potential regardless of illumination condition. These two approaches may be combined. A resistive film connecting the pixel contacts may be used in conjunction with the second approach to prevent aliasing of signal and noise.