Resistloses Lithographieverfahren zur Herstellung feiner Strukturen

摘要

The invention relates to a resistless lithography method for producing fine structures. According to said method, a semiconductor mask layer (HM) is formed on a carrier material (TM, HM'), and a selective ion implantation (I) is carried out in order to dope selected regions (1) of the semiconductor mask layer (HM). A semiconductor mask which can be used for further structuring is obtained by removing the non-doped regions of the semiconductor mask layer (HM) by means of a wet-chemical process. The invention thus provides a simple and highly precise resistless lithography method for producing structures smaller than 100 nm.