| 摘要 |
The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 OMEGA .cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 OMEGA .cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods. Thus, there is provided a DZ-IG silicon wafer in which a DZ layer of high quality is formed, and which can maintain high resistivity even if the wafer is subjected to a heat treatment for device production. <IMAGE>
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