| 摘要 |
A method of forming a dual damascene structure. A substrate having a conductive layer thereon is provided. A passivation layer, a first dielectric layer, an etching stop layer, a second dielectric layer and cap layer serving as a base anti-reflection coating are sequentially formed over the substrate. The cap layer and the second dielectric layer are patterned to form a first opening that exposes a portion of the etching stop layer. A patterned negative photoresist layer having a second opening therein is formed above the cap layer. The cap layer exposed by the second opening and the second dielectric layer exposed by the first opening are removed. Thereafter, the second dielectric layer exposed by the second opening is removed to form a trench and the first dielectric layer exposed by the first opening is removed to form a via opening. The passivation layer exposed by via opening and then the negative photoresist layer is removed. A conformal barrier layer and a conductive layer are sequentially formed over the trench and the via opening with the conductive layer, completely filling the trench and the via opening.
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