METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a characteristic of the semiconductor device from being deteriorated by misalignment, by forming a landing plug and by forming an etch preventing layer on the resultant structure. CONSTITUTION: A stack structure composed of the first interlayer dielectric(63) and the etch preventing layer(65) that has the landing plug(69) is formed on a semiconductor substrate(51). The second interlayer dielectric(70) is formed on the etch preventing layer and a bitline(79) connected to the landing plug through the second interlayer dielectric is formed. The third interlayer dielectric(81) is formed to planarize the upper portion of the bitline. A storage electrode contact hole exposing the landing plug is formed through a photolithography process using a storage electrode contact mask.