| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce a time interval and the number of processes and to decrease the number and kinds of etch solutions by performing a wet etch process using a constant voltage method before multi metal layers are formed and by performing a selective etch process regarding each layer of the multi metal layers. CONSTITUTION: The selective etch process is performed on each layer of an under barrier metal(UBM) layer through a constant voltage method in a wafer level chip size package(WLCSP) process for forming the semiconductor device.
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