LAYOUT METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A layout method of a semiconductor device is provided to be capable of restraining the dislocation by rounding edge portions of an active region. CONSTITUTION: Edge portions of a box-type active region(35) are rounded. By shortening the length of a gate electrode(37), the gate electrode(37) is spaced apart from the edge portions of the active region(35). Then, ion-implantation processing is performed to form a source/drain region using an exposure mask(39). At this time, the dislocation due to stress of the ion-implantation is restrained.