| 摘要 |
PURPOSE: A method of forming metal interconnection in a semiconductor device is provided to perform easily post-lithography process by improving roughness of the surface of a tungsten layer, and improve reproductivity of the pattern. CONSTITUTION: A bitline contact hole is formed by selective etching after forming an interlayer dielectric on a semiconductor substrate. A tungsten layer is formed on the entire surface before burying the bitline contact hole. A nitrous oxide(N2O) plasma process is carried out on the tungsten layer and then CMP is carried out. A tungsten pattern is formed by a cleaning process.
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