| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to be capable of preventing corrosion of a fuse. CONSTITUTION: The first interlayer dielectric(33) is formed on a semiconductor substrate(30). A fuse layer(38) is formed on the first interlayer dielectric(33). The second interlayer dielectric(36) is formed on the fuse layer(38). The first contact plug(34) is formed at both ends of the fuse layer. The second contact plug(35) is formed between the first contact plugs via the second interlayer dielectric(36), the fuse layer(38) and the first interlayer dielectric(33). A fuse box is formed by selectively etching the second interlayer dielectric(36) to partially remain the second interlayer dielectric.
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