| 摘要 |
PURPOSE: A photoresist composition containing a boron compound is provided to prevent the pattern width sliming and to improve the reproducibility and reliability of the photomask process. A patterning method using the composition is also provided. CONSTITUTION: The photoresist composition comprises a photoresist polymer, a photo-acid generator and an organic solvent and is characterized by further comprising 0.1 to 10 wt% of a boron compound based on the photoresist polymer. The patterning method comprises the steps of applying the photoresist composition on the top of the layer to be etched, formed on a semiconductor substrate to form a photoresist layer, exposing the photoresist layer to a light source, and developing the exposed photoresist layer with a developing agent. |
