METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of improving reliability of EM(Electro-Migration), contact resistance and gap-filling property. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). A contact hole is formed by selectively etching the interlayer dielectric(22). A stacked barrier metal including IMP(Ionized Metal Plasma)-Ti(24) and MOCVD(Metal Organic CVD)-TiN(25), is formed on the resultant structure including the contact hole. An ALPS(Aluminum Low Pressure Seed) layer(26) is deposited on the barrier metal. An aluminum film(27) is then formed on the ALPS layer(26). The resultant structure is then annealed at the temperature of 400-420°C.