METHOD FOR MANUFACTURING FLASH MEMORY

摘要

PURPOSE: A method for manufacturing a flash memory is provided to be capable of restraining residues from being generated at a cell/peripheral boundary region by preventing the damage of the cell/peripheral boundary region due to etching processes using the first and second boundary isolation layer and a boundary active region. CONSTITUTION: A cell region, a peripheral region, and cell/peripheral boundary region are defined at a semiconductor substrate(41). The first and second boundary isolation layer(42A,42B) are formed at both sides of the cell/peripheral boundary region. Then, a boundary active region(42C) is formed between the first and second boundary isolation layer. After sequentially depositing a tunnel oxide layer and the first polysilicon layer on the entire surface of the resultant structure, the first polysilicon layer is patterned by carrying out an etching process using a floating gate mask layer. Then, a dielectric layer and an amorphous silicon layer are sequentially deposited on the entire surface of the resultant structure.