| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of simplifying manufacturing processes, and preventing etch residues by forming a Pt film using electroless plating. CONSTITUTION: A capacitor oxide layer(16) is formed on a semiconductor substrate(11) having a plug(13). A storage node contact hole is formed by selectively etching the capacitor oxide layer(16). A metallic substrate(18) is formed on the storage node contact hole. A Pt film(19) as a storage node is then formed on the metallic substrate(18) by electroless plating of Pt. A dielectric film(20) and an upper electrode(21) are sequentially formed on the Pt film(19).
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