| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of improving capacitance by increasing the area of MIM capacitor. CONSTITUTION: After forming a lower metal wiring(104) on the first interlayer dielectric(100), the first insulating layer(105) and an upper electrode(106a) are sequentially formed on the lower metal wiring. After forming the second insulating layer(108) on the resultant structure, the second insulating layer(108) is patterned to form three dimensional pattern, thereby forming a dielectric film(110). After forming the second interlayer dielectric on the resultant structure, via holes are formed to expose the lower metal wiring(104) and the upper electrode(106a). A plug is filled into the via hole. An upper metal wiring is formed to connect the plug.
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