METHOD FOR PLANARIZING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A planarization method of a semiconductor device is provided to be capable of preventing processing failure due to the thickness difference of an interlayer dielectric. CONSTITUTION: Insulating particles(23) are deposited on a semiconductor substrate(21) having metal patterns(22) by using sol-gel technique. The metal patterns(22) and the insulating particles(23) are planarized. The insulating particles(23) are sintered. Then, an insulating layer(24) is formed on the entire surface of the resultant structure. At this time, PETEOS(Plasma Enhanced Tetra Ethyl Ortho Silicate) is used as the insulating layer(24).