| 摘要 |
PURPOSE: A method for forming a multi-layer wire is provided to prevent erosion of a tungsten plug exposed due to misalignment and prohibit growth of a key hole by forming a tungsten nitride film on a conductive plug. CONSTITUTION: The method for forming a multi-layer wire forms an interlayer insulating film(104) on a semiconductor substrate(100) in which a lower wire(102) is formed. A contact hole through which the surface of the lower wire is opened is formed in the interlayer insulating film. A conductive material is buried and is then flattened to form a tungsten plug(110) connected to the lower wire. The resulting structure in which the tungsten plug is formed is treated by plasma to form a conductive thin film(112a) on the tungsten plug. An upper wire(114) connected to the plasma-processed conductive plug is formed.
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