ORGANOSILICATE POLYMER FOR FORMATION OF INSULATION FILM OF SEMICONDUCTOR AND LOW DIELECTRIC INSULATION FILM CONTAINING THE POLYMER

摘要

PURPOSE: An organosilicate polymer, its preparation method, a coating composition containing the polymer for the formation of an insulating film of semiconductor, a preparation method of an insulating film using the composition, an insulating film prepared by the method and a semiconductor device containing the insulating film are provided, to reduce the dielectric characteristic of the polymer and to improve the insulation and the mechanical properties of the film prepared by using the polymer. CONSTITUTION: The organosilicate polymer comprises the oxidation or hydrolysis polycondensation product of the cyclic hydridosilane represented by the formula 1, wherein R1 is H, F, an aryl group, a vinyl group, an allyl group or a linear or branched alkyl group of C1-C4 substituted or unsubstituted with F; and k and l are independently an integer of 3-10. The organosilicate polymer is prepared by partially substituting the hydrogen of the cyclic hydridosilane of the formula 1 with a hydroxy group by using an oxidizing agent or water and a catalyst; and polymerizing it by polycondensation.